A review of tunnel field-effect transistors for improved ON-state behaviour
KRN Karthik, CK Pandey - Silicon, 2023 - Springer
Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …
possibly replace the traditional MOSFET from current IC technology. It has gained much …
A review of engineering techniques to suppress ambipolarity in tunnel FET
Scaling of conventional MOSFET is hindered by the fact that the subthreshold swing cannot
be reduced less than 60 mV/decade. Tunnel FET (TFET) is a promising candidate to replace …
be reduced less than 60 mV/decade. Tunnel FET (TFET) is a promising candidate to replace …
Simulation study of dielectric modulated dual channel trench gate TFET-based biosensor
A dielectric modulated dual channel trench gate tunnel FET (DM-DCTGTFET) based
biosensor is proposed for label-free detection of biomolecules. The gate of DM-DCTGTFET …
biosensor is proposed for label-free detection of biomolecules. The gate of DM-DCTGTFET …
Computing with ferroelectric FETs: Devices, models, systems, and applications
In this paper, we consider devices, circuits, and systems comprised of transistors with
integrated ferroelectrics. Said structures are actively being considered by various …
integrated ferroelectrics. Said structures are actively being considered by various …
Investigating the effects of doping gradient, trap charges, and temperature on Ge vertical TFET for low power switching and analog applications
Influence of Gaussian doping in transistor regions, doping gradient step size (σ), interface
trap charges (ITC), and temperature on DC, Analog, and Linearity performance of Ge …
trap charges (ITC), and temperature on DC, Analog, and Linearity performance of Ge …
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor
In this paper, a novel Triple metal double gate germanium on insulator vertical TFET is
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
A novel dopingless fin-shaped SiGe channel TFET with improved performance
S Chen, S Wang, H Liu, T Han, H Xie… - Nanoscale Research …, 2020 - Springer
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and
studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe …
studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe …
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation
In this paper, the complementary charge-plasma (CP) based symmetrical-gate electron–
hole bilayer (EHB) tunnel field-effect transistor (TFET) at a low operating voltage (⩽ 0.5 V) is …
hole bilayer (EHB) tunnel field-effect transistor (TFET) at a low operating voltage (⩽ 0.5 V) is …
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications
A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction
and an n+-drain is presented in this paper. Two highly-doped p+ silicon layers are devised …
and an n+-drain is presented in this paper. Two highly-doped p+ silicon layers are devised …
Dielectric modulated GaAs1− x Sb X FinFET as a label-free biosensor: Device proposal and investigation
In this paper, we propose and investigate a dielectric modulated (DM) GaAs 1− x Sb x
FinFET as a label-free biosensor. Raised source drain (RSD) architecture is employed in the …
FinFET as a label-free biosensor. Raised source drain (RSD) architecture is employed in the …