Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
ML Lee, EA Fitzgerald, MT Bulsara, MT Currie… - Journal of applied …, 2005 - pubs.aip.org
This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …
Mobility enhancement technology for scaling of CMOS devices: overview and status
The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS)
technology to the sub-21-nm technology node is facing great challenges. Innovative …
technology to the sub-21-nm technology node is facing great challenges. Innovative …
SiGe quantum well infrared photodetectors on strained-silicon-on-insulator
We demonstrate p-type SiGe quantum well infrared photodetectors (QWIPs) on a strained-
silicon-on-insulator (sSOI) substrate. The sSOI system allows strain-balancing between the …
silicon-on-insulator (sSOI) substrate. The sSOI system allows strain-balancing between the …
Study on liquid-like SiGe cluster growth during co-condensation from supersaturated vapor mixtures by molecular dynamics simulation
WB Wang, R Ohta, M Kambara - Physical Chemistry Chemical Physics, 2022 - pubs.rsc.org
Based on the co-condensation processes in the Si–Ge system upon cooling, as determined
by molecular dynamics (MD) simulation, we explored the mixed cluster growth dynamics …
by molecular dynamics (MD) simulation, we explored the mixed cluster growth dynamics …
Strain dependence of indirect band gap for strained silicon on insulator wafers
We have used low temperature photoluminescence measurements in order to quantify the
impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on …
impact of strain effect on the Si indirect band gap in 9 nm thick tensely strained silicon on …
Electron effective mobility in strained-Si/Si1− xGex MOS devices using Monte Carlo simulation
V Aubry-Fortuna, P Dollfus, S Galdin-Retailleau - Solid-state electronics, 2005 - Elsevier
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-
channel strained-Si/Si1− xGex MOS structures. The influence of the strain in the Si layer and …
channel strained-Si/Si1− xGex MOS structures. The influence of the strain in the Si layer and …
Strain in silicon nanowire beams
In this work, strain in silicon free standing beams loaded in uniaxial tension is experimentally
and theoretically investigated for strain values ranging from 0 to 3.6%. The fabrication …
and theoretically investigated for strain values ranging from 0 to 3.6%. The fabrication …
Local defect-free elastic strain relaxation of Si1-xGex embedded into SiO2
E Assaf, I Berbezier, M Bouabdellaoui, M Abbarchi… - Applied Surface …, 2022 - Elsevier
We show that a newly developed high temperature, ultra-low rate oxidation process can
produce homogeneous, fully strained, defect-free and perfectly flat Silicon Germanium (Si 1 …
produce homogeneous, fully strained, defect-free and perfectly flat Silicon Germanium (Si 1 …
The crystallographic properties of strained silicon measured by X-ray diffraction
M Erdtmann, TA Langdo - Journal of Materials Science: Materials in …, 2006 - Springer
Strained silicon represents a materials-based enhancement to further scaling of CMOS
transistors. In epitaxial strained silicon substrates, strain is provided by a relaxed SiGe …
transistors. In epitaxial strained silicon substrates, strain is provided by a relaxed SiGe …
Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial
A simple and low cost technological approach for the straining of thin crystalline silicon (Si)
films using porous silicon (PS) as stress generating nanomaterial is reported. Structural …
films using porous silicon (PS) as stress generating nanomaterial is reported. Structural …