Bi2O2Se: A rising star for semiconductor devices

X Ding, M Li, P Chen, Y Zhao, M Zhao, H Leng, Y Wang… - Matter, 2022 - cell.com
With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi 2
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …

Electronic Transport and Quantum Phenomena in Nanowires

G Badawy, EPAM Bakkers - Chemical Reviews, 2024 - ACS Publications
Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Majorana nanowires for topological quantum computation

P Marra - Journal of Applied Physics, 2022 - pubs.aip.org
Majorana bound states are quasiparticle excitations localized at the boundaries of a
topologically nontrivial superconductor. They are zero-energy, charge-neutral, particle–hole …

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

K Wang, G Xu, F Gao, H Liu, RL Ma, X Zhang… - Nature …, 2022 - nature.com
Operation speed and coherence time are two core measures for the viability of a qubit.
Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in …

Strong tuning of Rashba spin–orbit interaction in single InAs nanowires

D Liang, XPA Gao - Nano Letters, 2012 - ACS Publications
A key concept in the emerging field of spintronics is the gate voltage or electric field control
of spin precession via the effective magnetic field generated by the Rashba spin–orbit …

Strong spin-orbit interaction and helical hole states in Ge/Si nanowires

C Kloeffel, M Trif, D Loss - Physical Review B—Condensed Matter and …, 2011 - APS
We study theoretically the low-energy hole states of Ge/Si core/shell nanowires. The low-
energy valence band is quasidegenerate, formed by two doublets of different orbital angular …

Spin-orbit interaction in InSb nanowires

I Van Weperen, B Tarasinski, D Eeltink, VS Pribiag… - Physical Review B, 2015 - APS
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together
with a theoretical analysis of weak antilocalization, to accurately extract spin-orbit strength …

Field Tuning the Factor in InAs Nanowire Double Quantum Dots

MD Schroer, KD Petersson, M Jung, JR Petta - Physical review letters, 2011 - APS
We study the effects of magnetic and electric fields on the g factors of spins confined in a two-
electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by …

Correlating the nanostructure and electronic properties of InAs nanowires

MD Schroer, JR Petta - Nano letters, 2010 - ACS Publications
The electronic properties and nanostructure of InAs nanowires are correlated by creating
multiple field effect transistors (FETs) on nanowires grown to have low and high defect …

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP (001), InP (111) B, and InP (011) surfaces

JS Lee, S Choi, M Pendharkar, DJ Pennachio… - Physical Review …, 2019 - APS
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-
dimensional (1D) channels using patterned SiO 2-coated InP (001), InP (111) B, and InP …