Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions
Q Zeng, Z Yang, X Wang, S Li… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
With the continuous development and progress of science and technology, the third-
generation semiconductor power devices (SPDs) represented by SiC MOSFETs have …
generation semiconductor power devices (SPDs) represented by SiC MOSFETs have …
Space radiation effects on SiC power device reliability
JM Lauenstein, MC Casey, RL Ladbury… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Heavy-ion radiation can result in silicon carbide power device degradation and/or
catastrophic failure. Test procedures and data interpretation must consider the impact that …
catastrophic failure. Test procedures and data interpretation must consider the impact that …
Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs
C Martinella, T Ziemann, R Stark… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in
commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with …
commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with …
Opportunities in single event effects in radiation-exposed SiC and GaN power electronics
Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …
and must be understood for space and avionics applications involving exposure to various …
Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part II
C Abbate, G Busatto, D Tedesco… - … on Electron Devices, 2019 - ieeexplore.ieee.org
This article presents the results of a 2-D finite element simulation study of the gate damages
induced by heavy-ion irradiation in SiC power metal-oxide-semiconductor field-effect …
induced by heavy-ion irradiation in SiC power metal-oxide-semiconductor field-effect …
[HTML][HTML] Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
C Martinella, P Natzke, RG Alía, Y Kadi… - Microelectronics …, 2022 - Elsevier
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for
space, avionics and high-energy accelerator applications. However, the current commercial …
space, avionics and high-energy accelerator applications. However, the current commercial …
[HTML][HTML] Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers
NiO/Ga 2 O 3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays
either with or without reverse biases. While there is a small component of Compton electrons …
either with or without reverse biases. While there is a small component of Compton electrons …
High-energy proton and atmospheric-neutron irradiations of SiC power MOSFETs: SEB study and impact on channel and drift resistances
Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric
neutrons were performed for commercial silicon carbide (SiC) power MOSFETs with different …
neutrons were performed for commercial silicon carbide (SiC) power MOSFETs with different …