Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge
D Christen, J Biela - IEEE Transactions on Power Electronics, 2018 - ieeexplore.ieee.org
Modern wide-bandgap devices, such as SiC-or GaN-based devices, feature significantly
reduced switching losses, and the question arises if soft-switching operating modes are still …
reduced switching losses, and the question arises if soft-switching operating modes are still …
Single-phase to three-phase power converters: State of the art
EC dos Santos, CB Jacobina… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Single-phase to three-phase conversion using power electronics converters is a well-known
technology, especially when the configurations and control strategies already established in …
technology, especially when the configurations and control strategies already established in …
Comparison of a buck converter and a series capacitor buck converter for high-frequency, high-conversion-ratio voltage regulators
PS Shenoy, M Amaro, J Morroni… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents an analytical and experimental comparison of a two-phase buck
converter and a two-phase, series capacitor buck converter. The limitations of a …
converter and a two-phase, series capacitor buck converter. The limitations of a …
Predictive algorithm for optimizing power flow in hybrid ultracapacitor/battery storage systems for light electric vehicles
O Laldin, M Moshirvaziri… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
This study deals with the optimal control of hybrid energy storage systems for electric vehicle
applications. These storage systems can capitalize on the high specific energy of Lithium …
applications. These storage systems can capitalize on the high specific energy of Lithium …
An insight into the switching process of power MOSFETs: An improved analytical losses model
The piecewise linear model has traditionally been used to calculate switching losses in
switching mode power supplies due to its simplicity and good performance. However, the …
switching mode power supplies due to its simplicity and good performance. However, the …
Evaluation of switching loss contributed by parasitic ringing for fast switching wide band-gap devices
Parasitic ringing is commonly observed during the high-speed switching of wide band-gap
(WBG) devices. Additional loss contributed by parasitic ringing becomes a concern …
(WBG) devices. Additional loss contributed by parasitic ringing becomes a concern …
Analytical Estimation of Turn on Switching Loss of SiC mosfet and Schottky Diode Pair From Datasheet Parameters
SK Roy, K Basu - IEEE Transactions on Power Electronics, 2018 - ieeexplore.ieee.org
Estimation of switching loss at the early stages of design is essential for determination of
switching frequency and selection of power devices. Analytical estimation similar to gate …
switching frequency and selection of power devices. Analytical estimation similar to gate …
Hybrid buck–boost feedforward and reduced average inductor current techniques in fast line transient and high-efficiency buck–boost converter
PC Huang, WQ Wu, HH Ho… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
This paper presents a buck-boost converter with high efficiency and small output ripple to
extend the battery life of portable devices. Besides, the hybrid buck-boost feedforward …
extend the battery life of portable devices. Besides, the hybrid buck-boost feedforward …
Switching losses prediction methods oriented to power MOSFETs–a review
WJ de Paula, GHM Tavares, GM Soares… - IET Power …, 2020 - Wiley Online Library
The aim of this study is to review the state‐of‐the‐art of recent prediction methods for power
metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) switching losses using …
metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) switching losses using …
An active gate driver of SiC MOSFET module based on PCB Rogowski coil for optimizing tradeoff between overshoot and switching loss
P Xiang, R Hao, J Cai, X You - IEEE Transactions on Power …, 2022 - ieeexplore.ieee.org
The superior characteristics of the silicon carbide metal-oxide-semiconductor field-effect
transistor (SiC mosfet) allow its wide use for improving the efficiency and power density of …
transistor (SiC mosfet) allow its wide use for improving the efficiency and power density of …