Nonthermal plasmas have emerged as a viable synthesis technique for nanocrystal
materials. Inherently solvent and ligand-free, nonthermal plasmas offer the ability to …

CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

We propose a two-step oxidation with high-pressure oxidation and low-temperature oxygen
annealing to form ideal Ge/GeO 2 stacks based on thermodynamic and kinetic control. The …

Germanium and silicon have lagged behind more popular II− VI and IV− VI semiconductor
materials in the emerging field of semiconductor nanocrystal thin film devices. We report …

We quantitatively examine the relative influence of bulk impurities and surface states on the
electrical properties of Ge nanowires with and without phosphorus (P) doping. The …

Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several
different research groups in the past. The major mechanisms behind poor Ge NMOS …

Ferroelectric field-effect transistors (FeFETs) with a TiN/Hf0. 5Zr0. 5O2 (HZO) gate stack on a
germanium p-type channel are fabricated as low-voltage nonvolatile memory (NVM) …

In this paper, the acceptor and donor nature of interface traps are investigated using
conductance and interface trap time constant measurements on Ge n-and p-type metal …

The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS)
technology to the sub-21-nm technology node is facing great challenges. Innovative …

Planar and 3-dimensional (3D) buried-channel InGaAs metal-oxide-semiconductor field-
effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron …