Erbium doped materials are of great interest in thin film integrated optoelectronic technology,
due to their Er 3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er …

Erbium‐doped fiber devices have been extraordinarily successful due to their broad optical
gain around 1.5–1.6 µm. Er‐doped fiber amplifiers enable efficient, stable amplification of …

The overlap of the principal luminescence band of the erbium ion with the low-loss optical
transmission window of silica optical fibres, along with the drive for integration of photonics …

A detailed investigation on the excitation and deexcitation processes of Er 3+ in Si is
reported. In particular, we explored Er pumping through electron-hole pair recombination …

Recombination processes in rare-earth metals in semiconductors are a special case due to
the localized nature of f electrons. Our work explores in detail the radiative and nonradiative …

The integration of electronic and optical components within a single Si chip would allow one
to combine the excellent capability of information processing provided by Si electronic …

We report on spectral and time-resolved photoluminescence (PL) studies performed on Eu-
doped GaN prepared by solid-source molecular-beam epitaxy. Using above-gap excitation …

We demonstrate that the electrical excitation of Er ions incorporated within the depletion
layer of apn Si diode allows one to simultaneously obtain efficient pumping of rare earth ions …

Temperature dependent measurements of the 1.54 μm photoluminescence of Er implanted
N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …