Erbium implanted thin film photonic materials
A Polman - Journal of applied physics, 1997 - pubs.aip.org
Erbium doped materials are of great interest in thin film integrated optoelectronic technology,
due to their Er 3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er …
due to their Er 3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er …
Erbium‐doped integrated waveguide amplifiers and lasers
JDB Bradley, M Pollnau - Laser & Photonics Reviews, 2011 - Wiley Online Library
Erbium‐doped fiber devices have been extraordinarily successful due to their broad optical
gain around 1.5–1.6 µm. Er‐doped fiber amplifiers enable efficient, stable amplification of …
gain around 1.5–1.6 µm. Er‐doped fiber amplifiers enable efficient, stable amplification of …
Erbium in silicon
AJ Kenyon - Semiconductor Science and Technology, 2005 - iopscience.iop.org
The overlap of the principal luminescence band of the erbium ion with the low-loss optical
transmission window of silica optical fibres, along with the drive for integration of photonics …
transmission window of silica optical fibres, along with the drive for integration of photonics …
Excitation and nonradiative deexcitation processes of in crystalline Si
A detailed investigation on the excitation and deexcitation processes of Er 3+ in Si is
reported. In particular, we explored Er pumping through electron-hole pair recombination …
reported. In particular, we explored Er pumping through electron-hole pair recombination …
Electroluminescence of erbium-doped silicon
J Palm, F Gan, B Zheng, J Michel, LC Kimerling - Physical Review B, 1996 - APS
Recombination processes in rare-earth metals in semiconductors are a special case due to
the localized nature of f electrons. Our work explores in detail the radiative and nonradiative …
the localized nature of f electrons. Our work explores in detail the radiative and nonradiative …
Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes
The integration of electronic and optical components within a single Si chip would allow one
to combine the excellent capability of information processing provided by Si electronic …
to combine the excellent capability of information processing provided by Si electronic …
Spectral and time-resolved photoluminescence studies of Eu-doped GaN
EE Nyein, U Hömmerich, J Heikenfeld, DS Lee… - Applied physics …, 2003 - pubs.aip.org
We report on spectral and time-resolved photoluminescence (PL) studies performed on Eu-
doped GaN prepared by solid-source molecular-beam epitaxy. Using above-gap excitation …
doped GaN prepared by solid-source molecular-beam epitaxy. Using above-gap excitation …
Excitation and deexcitation of in crystalline silicon
PG Kik, MJA De Dood, K Kikoin, A Polman - Applied Physics Letters, 1997 - pubs.aip.org
Temperature dependent measurements of the 1.54 μm photoluminescence of Er implanted
N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the …
N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the …
Metastable group IV allotropes and solid solutions: Nanoparticles and nanowires
In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …
extensive research. Beside tremendous progress in morphological control and integration in …
Observing Sites in Si With an In Situ Single-Photon Detector
We present a flexible method to study the optical properties of an Er 3+ ensemble in Si
accessed via resonant excitation and in situ single-photon detection. The technique allows …
accessed via resonant excitation and in situ single-photon detection. The technique allows …