Charge Redistribution in Mg-Doped p-Type MoS2/GaN Photodetectors
B Cao, S Ma, W Wang, X Tang, D Wang… - The Journal of …, 2022 - ACS Publications
MoS2/GaN p–n heterojunction photodetectors with enhanced built-in electric field have
paved the way for nanoelectronic and nano-optoelectronic applications. However, the …
paved the way for nanoelectronic and nano-optoelectronic applications. However, the …
First principles study on stacking-dependent electronic structure of CrI3/α-In 2 S e 3 heterostructures
T Liu, Z Yang, A Li, F Ouyang - Journal of Applied Physics, 2023 - pubs.aip.org
The stacking orders that may be generated by mirroring a layer of Cr X 3 (X= I, Br, Cl)
through its Cr atomic layer in heterostructures are easy to be ignored so that the influence of …
through its Cr atomic layer in heterostructures are easy to be ignored so that the influence of …
[图书][B] Ferroelectric Properties and Exciton Localization in Two-Dimensional Semiconductors
ML Gabel - 2021 - search.proquest.com
The ferroelectric and optical properties of two-dimensional indium selenide (In 2 Se 3), as
well as the mechanical and optical properties of stacked monolayer molybdenum di …
well as the mechanical and optical properties of stacked monolayer molybdenum di …