Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire
We have studied the crystalline, optical and photo-response properties of epitaxial GaN films
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …
Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications
We have grown various epitaxial GaN nanostructures on sapphire (11–20) substrates by
tuning the buffer layer growth conditions in laser molecular beam epitaxy (LMBE) process …
tuning the buffer layer growth conditions in laser molecular beam epitaxy (LMBE) process …
[HTML][HTML] Density-controlled growth of ZnO nanowalls for high-performance photocatalysts
YC Chang, YR Lin, SW Chen, CM Chou - Materials, 2022 - mdpi.com
ZnO nanowires and nanowalls can be fabricated on the glass substrate with a ZnO seed film
and low-cost aluminum (Al) foil by the aqueous solution method (ASM), respectively. The …
and low-cost aluminum (Al) foil by the aqueous solution method (ASM), respectively. The …
[HTML][HTML] In (Ga) n nanostructures and devices grown by molecular beam epitaxy and metal-assisted photochemical etching
This review summarizes the recent research on nitride nanostructures and their applications.
We cover recent advances in the synthesis and growth of porous structures and low …
We cover recent advances in the synthesis and growth of porous structures and low …
Effect of indium doping on motions of< a>-prismatic edge dislocations in wurtzite gallium nitride
The influences of indium doping on dynamics of< a>-prismatic edge dislocation along
shuffle plane in wurtzite GaN have been investigated employing classical molecular …
shuffle plane in wurtzite GaN have been investigated employing classical molecular …
Optical confinement study of laser MBE grown InGaN/GaN quantum well structure using surface plasmon resonance technique
Abstract Laser Molecular Beam Epitaxy (Laser MBE) technique is utilized for the growth of
InGaN/GaN quantum well (QW) structure. Present work reports the optimization of QW …
InGaN/GaN quantum well (QW) structure. Present work reports the optimization of QW …
A green, low-cost method to prepare GaN films by plasma enhanced chemical vapor deposition
Q Liang, RZ Wang, MQ Yang, Y Ding, CH Wang - Thin Solid Films, 2020 - Elsevier
In this study, the GaN films have been prepared by a green and low-cost plasma enhanced
chemical vapor deposition (PECVD) method on Al 2 O 3 substrate, along with Ga 2 O 3 and …
chemical vapor deposition (PECVD) method on Al 2 O 3 substrate, along with Ga 2 O 3 and …
Metal-modulated epitaxy of Mg-doped Al0. 80In0. 20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes
HI Solís-Cisneros… - Journal of …, 2024 - iopscience.iop.org
This work reports the growth and characterization of p-AlInN layers doped with Mg by
plasma-assisted molecular beam epitaxy (PAMBE). AlInN was grown with an Al molar …
plasma-assisted molecular beam epitaxy (PAMBE). AlInN was grown with an Al molar …
Influence of surface nitridation and an AlN buffer layer on the growth of GaN nanostructures on a flexible Ti metal foil using laser molecular beam epitaxy
GaN nanorods (NRs) and hollow nanocolumns (HNCs) were grown on flexible Ti foils using
laser-assisted molecular beam epitaxy at a growth temperature of 700 C. The shape, size …
laser-assisted molecular beam epitaxy at a growth temperature of 700 C. The shape, size …
Optical properties of LMBE grown c-axis oriented GaN thin films using Surface Plasmon Resonance technique
Present work reports the growth and optimisation of thin films of Gallium nitride (GaN) with
preferred c-axis (0002) orientation on Si (111) substrate using the Laser Molecular Beam …
preferred c-axis (0002) orientation on Si (111) substrate using the Laser Molecular Beam …