Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …

The application of Schottky junction in self-powered devices is limited by low efficiency in
both separation and transport of photogenerated electrons/holes. This issue may be …

Thermogravimetric analysis (TGA) and X-ray diffraction (XRD) were used to study the
structure characterization of the Rhodamine B (Rh. B). The thermal stability and the lattice …

In order to determine the effective current-conduction mechanisms in Au/TiO 2/n-4H-SiC
(metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage …

In this study, both the metal-semiconductor (MS) and metal-polymer-semiconductor
(MPS),(Al/C 20 H 12/p-Si), type Schottky barrier diodes (SBDs) were fabricated using spin …

This paper demonstrates the electrical and current transport properties of prepared Ti/α-
amylase/p-InP metal/polymer/semiconductor (MPS) junction by current–voltage (I–V) …

Abstract The novel 6-ethyl-3-{[(3-cyano-4, 6-dimethyl-2-oxo-1, 2-dihydropyridin-1-yl) imino]
methyl}-4H-pyrano [3, 2-c] quinoline-4, 5 (6H)‑dione (EPIMPQ) was obtained by reacting …

This study presents the manufacture of the Cu 2 ZnSnSe 4/n-Si (CZTSe4/Si) heterojunction
via the liquid phase epitaxy process. The current-voltage estimation for CZTSe 4/Si …

Si 3 N 4 films were deposited on n-type silicon substrate by the radio frequency magnetron
sputtering technique. The current–voltage (I–V) characteristics of Au/Si 3 N 4/n-Si (metal …

The polycrystalline ZnGa2Se4 thin film was prepared by thermal evaporation technique on n-
Si wafer followed by annealing at 700K. Then, the Al/p-ZnGa2Se4/n-Si/Al heterojunction …