Experimental Revelation of Surface and Bulk Lattices in Faceted Cu2O Crystals
Semiconductor crystals have generally shown facet‐dependent electrical, photocatalytic,
and optical properties. These phenomena have been proposed to result from the presence …
and optical properties. These phenomena have been proposed to result from the presence …
Low-Temperature Growth of Rock Salt MnS Nanocrystals with Facet-Dependent Behaviors
CK Chen, BH Chen, MH Huang - Chemistry of Materials, 2023 - ACS Publications
Rock salt-phase MnS nanocubes with tunable sizes of 35 to 110 and 65 to 154 nm
octahedra have been synthesized at 60–90° C in aqueous solutions. At 110° C, 323 nm …
octahedra have been synthesized at 60–90° C in aqueous solutions. At 110° C, 323 nm …
Facet-dependent optical and electrical properties of SrTiO 3 wafers
Transparent {100} and {111} SrTiO3 wafers display a visually detectable color difference.
They give considerably different absorption spectra, and have band gaps of 3.04 and 3.06 …
They give considerably different absorption spectra, and have band gaps of 3.04 and 3.06 …
Morphological evolution of cadmium oxide crystals showing color changes and facet-dependent conductivity behavior
G Kumar, CR Chen, BH Chen, JW Chen… - Journal of Materials …, 2022 - pubs.rsc.org
CdO stellated octahedra, octahedra,{100}-truncated octahedra, and Cd (OH) 2 hexagonal
plates with respective average sizes of 147 nm, 700 nm, 2 μm, and 105 nm have been …
plates with respective average sizes of 147 nm, 700 nm, 2 μm, and 105 nm have been …
[HTML][HTML] High-Performance Memristive Synapse Based on Space-Charge-Limited Conduction in LiNbO3
Advancing neuromorphic computing technology requires the development of versatile
synaptic devices. In this study, we fabricated a high-performance Al/LiNbO3/Pt memristive …
synaptic devices. In this study, we fabricated a high-performance Al/LiNbO3/Pt memristive …
Distribution of the electrical resistivity of a n-type 4H-SiC crystal
X Xie, Y Kong, L Xu, D Yang, X Pi - Journal of Crystal Growth, 2024 - Elsevier
Nitrogen is commonly doped to obtain n-type 4H-SiC crystals, which have been
commercialized for the development of power electronics in recent years. Now the uniformity …
commercialized for the development of power electronics in recent years. Now the uniformity …
Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates
S Park, KH Kim, S Mun, I Jeon, SJ Mun, YH Cho… - Journal of the Korean …, 2024 - Springer
An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the
sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a …
sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a …
Achieving 2.1% Efficiency in Alpha‐Voltaic Cell Based on Silicon Carbide Transducer
R Gao, W Ma, P Wan, A Liu, X Ouyang, X Du… - Energy & … - Wiley Online Library
Alpha‐voltaic cell is a type of micro nuclear battery that provides several decades of reliable
power in the nanowatt to microwatt range, supplying for special applications where …
power in the nanowatt to microwatt range, supplying for special applications where …
Prediction of Temperature‐Dependent Stress in 4H‐SiC Using In Situ Nondestructive Raman Spectroscopy Characterization
Z Yang, X Wang, Y Zuo, Z Tang, B Guo… - Laser & Photonics … - Wiley Online Library
Abstract 4H‐SiC is widely used in power electronics owing to its superior physical
properties. However, temperature‐induced stresses compromise the reliability of 4H‐SiC …
properties. However, temperature‐induced stresses compromise the reliability of 4H‐SiC …