Experimental Revelation of Surface and Bulk Lattices in Faceted Cu2O Crystals

BH Chen, G Kumar, YJ Wei, HH Ma, JC Kao, PJ Chou… - Small, 2023 - Wiley Online Library
Semiconductor crystals have generally shown facet‐dependent electrical, photocatalytic,
and optical properties. These phenomena have been proposed to result from the presence …

Low-Temperature Growth of Rock Salt MnS Nanocrystals with Facet-Dependent Behaviors

CK Chen, BH Chen, MH Huang - Chemistry of Materials, 2023 - ACS Publications
Rock salt-phase MnS nanocubes with tunable sizes of 35 to 110 and 65 to 154 nm
octahedra have been synthesized at 60–90° C in aqueous solutions. At 110° C, 323 nm …

Facet-dependent optical and electrical properties of SrTiO 3 wafers

G Kumar, ZL Chen, S Jena, MH Huang - Journal of Materials Chemistry …, 2023 - pubs.rsc.org
Transparent {100} and {111} SrTiO3 wafers display a visually detectable color difference.
They give considerably different absorption spectra, and have band gaps of 3.04 and 3.06 …

Morphological evolution of cadmium oxide crystals showing color changes and facet-dependent conductivity behavior

G Kumar, CR Chen, BH Chen, JW Chen… - Journal of Materials …, 2022 - pubs.rsc.org
CdO stellated octahedra, octahedra,{100}-truncated octahedra, and Cd (OH) 2 hexagonal
plates with respective average sizes of 147 nm, 700 nm, 2 μm, and 105 nm have been …

[HTML][HTML] High-Performance Memristive Synapse Based on Space-Charge-Limited Conduction in LiNbO3

Y Lee, S Lee - Nanomaterials, 2024 - pmc.ncbi.nlm.nih.gov
Advancing neuromorphic computing technology requires the development of versatile
synaptic devices. In this study, we fabricated a high-performance Al/LiNbO3/Pt memristive …

Distribution of the electrical resistivity of a n-type 4H-SiC crystal

X Xie, Y Kong, L Xu, D Yang, X Pi - Journal of Crystal Growth, 2024 - Elsevier
Nitrogen is commonly doped to obtain n-type 4H-SiC crystals, which have been
commercialized for the development of power electronics in recent years. Now the uniformity …

Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates

S Park, KH Kim, S Mun, I Jeon, SJ Mun, YH Cho… - Journal of the Korean …, 2024 - Springer
An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the
sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a …

Achieving 2.1% Efficiency in Alpha‐Voltaic Cell Based on Silicon Carbide Transducer

R Gao, W Ma, P Wan, A Liu, X Ouyang, X Du… - Energy & … - Wiley Online Library
Alpha‐voltaic cell is a type of micro nuclear battery that provides several decades of reliable
power in the nanowatt to microwatt range, supplying for special applications where …

Prediction of Temperature‐Dependent Stress in 4H‐SiC Using In Situ Nondestructive Raman Spectroscopy Characterization

Z Yang, X Wang, Y Zuo, Z Tang, B Guo… - Laser & Photonics … - Wiley Online Library
Abstract 4H‐SiC is widely used in power electronics owing to its superior physical
properties. However, temperature‐induced stresses compromise the reliability of 4H‐SiC …