The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

Transient electron transport and velocity overshoot in wurtzite GaN, InN, and AlN are
examined and compared with that which occurs in GaAs. For all materials, we find that …

Unique properties of GaN and related semiconductors make them superior for high-power
applications. The maximum density of the two-dimensional electron gas at the GaN/AlGaN …

We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures
(with the electron sheet concentration ns≈ 10 13 cm− 2) grown on conducting 6H–SiC …

An overview is presented of progress in GaN electronic devices for high‐power, high‐
temperature applications. The wide bandgaps of the nitride materials, their excellent …

The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the
electrical effects of high density Ar or H 2 plasma exposure. The near surface of the p-GaN …

The performance results AlGaN-GaN Heterostructure Field Effect Transistors (HFETs) grown
on SiC substrates are reported. The maximum transconductance of these devices was 142 …

The fabrication and characterization of high performance AlGaN/GaN heterostructure field
effect transistors (HFETs) grown on p-type SiC substrates are reported for the first time. The …

We report on a SiO/sub 2//Si/sub 3/N/sub 4//SiO/sub 2/(ONO) gate insulator stack deposited
on GaN by jet vapor deposition (JVD) technique. Capacitors fabricated using the JVD-ONO …