Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

M Gurioli, Z Wang, A Rastelli, T Kuroda… - Nature materials, 2019 - nature.com
The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …

Structural properties of self-organized semiconductor nanostructures

J Stangl, V Holý, G Bauer - Reviews of modern physics, 2004 - APS
Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

Origin of ferroelectric phase stabilization via the clamping effect in ferroelectric hafnium zirconium oxide thin films

SS Fields, T Cai, ST Jaszewski… - Advanced Electronic …, 2022 - Wiley Online Library
The presence of the top electrode on hafnium oxide‐based thin films during processing has
been shown to drive an increase in the amount of metastable ferroelectric orthorhombic …

Mechanisms of stranski-krastanov growth

A Baskaran, P Smereka - Journal of Applied Physics, 2012 - pubs.aip.org
Stranski-Krastanov (SK) growth is reported experimentally as the growth mode that is
responsible for the transition to three dimensional islands in heteroepitaxial growth. A kinetic …

Growth and self-organization of SiGe nanostructures

JN Aqua, I Berbezier, L Favre, T Frisch, A Ronda - Physics Reports, 2013 - Elsevier
Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Atmospheric particles from organic vapours

CD O'Dowd, P Aalto, K Hmeri, M Kulmala, T Hoffmann - Nature, 2002 - nature.com
Aerosol particles produced over forested areas may affect climate by acting as nuclei for
cloud condensation, but their composition (and hence the chemical species that drive their …

Surface roughening of heteroepitaxial thin films

H Gao, WD Nix - Annual Review of Materials Science, 1999 - annualreviews.org
▪ Abstract Heteroepitaxial structures with strained semiconductor thin films are widely used
in electronic and optoelectronic devices. One of the more important defect creation …

Numerical simulations of island formation in a coherent strained epitaxial thin film system

YW Zhang, AF Bower - Journal of the Mechanics and Physics of Solids, 1999 - Elsevier
Three dimensional finite element computations are used to predict the formation of quantum
dot arrays in a strained epitaxial thin film system. The film is idealized as an initially planar …

Nucleationless three-dimensional island formation in low-misfit heteroepitaxy

P Sutter, MG Lagally - Physical review letters, 2000 - APS
The formation of faceted three-dimensional islands during growth of low-misfit Si 1− x Ge x
alloys on Si (100) has been investigated by low-energy electron microscopy. The formation …

Evolution of coherent islands in

JA Floro, E Chason, LB Freund, RD Twesten… - Physical Review B, 1999 - APS
The evolution of strain driven coherent islands is examined using sensitive real time stress
measurements during heteroepitaxial growth of Si 1− x Ge x/Si (001), combined with ex situ …