A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2
Y Wang, H Gong, Y Lv, X Fu, S Dun… - … on Power Electronics, 2021 - ieeexplore.ieee.org
In this letter, high-performance p-NiO/β-Ga 2 O 3 heterojunction diodes (HJDs) with
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
Y Lv, Y Wang, X Fu, S Dun, Z Sun, H Liu… - … on Power Electronics, 2020 - ieeexplore.ieee.org
In this article, we report on demonstrating the first vertical β-Ga 2 O 3 junction barrier
Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to …
Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to …
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2
C Wang, H Gong, W Lei, Y Cai, Z Hu… - IEEE Electron …, 2021 - ieeexplore.ieee.org
We report on achieving high-performance β-Ga 2 O 3 power devices through the
incorporation of the p-type NiO x. β-Ga 2 O 3 pn heterojunction (HJ) diodes, as well as the …
incorporation of the p-type NiO x. β-Ga 2 O 3 pn heterojunction (HJ) diodes, as well as the …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron, sp value of 0.93 GW/cm2
In this paper, we show that high-performance β-Ga 2 O 3 hetero-junction barrier Schottky
(HJBS) diodes with various β-Ga 2 O 3 periodic fin widths of 1.5/3/5 μm are demonstrated …
(HJBS) diodes with various β-Ga 2 O 3 periodic fin widths of 1.5/3/5 μm are demonstrated …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …