Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control
One-dimensional semiconductor nanostructures have been studied in great depth over the
past number of decades as potential building blocks in electronic, thermoelectric …
past number of decades as potential building blocks in electronic, thermoelectric …
Nano structured sensing surface: Significance in sensor fabrication
C Paladiya, A Kiani - Sensors and Actuators B: Chemical, 2018 - Elsevier
Trend of using miniaturized sensors in various fields is rapidly growing. Related sensing
surface topology can crucially affect the performance of a sensor by affecting various …
surface topology can crucially affect the performance of a sensor by affecting various …
A review on germanium nanowires
L Z. Pei, Z Y. Cai - Recent Patents on Nanotechnology, 2012 - benthamdirect.com
Ge nanowires exhibit wide application potential in the fields of nanoscale devices due to
their excellently optical and electrical properties. This article reviews the recent progress and …
their excellently optical and electrical properties. This article reviews the recent progress and …
Narrowing the length distribution of Ge nanowires
Synthesis of nanostructures of uniform size is fundamental because the size distribution
directly affects their physical properties. We present experimental data demonstrating a …
directly affects their physical properties. We present experimental data demonstrating a …
Kinetics of Si and Ge nanowires growth through electron beam evaporation
Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys
are thermodynamically similar (same phase diagram, with the eutectic temperature of about …
are thermodynamically similar (same phase diagram, with the eutectic temperature of about …
In-situ observation of< 110> oriented Ge nanowire growth and associated collector droplet behavior
M Kolíbal, T Vystavěl, L Novák, J Mach… - Applied Physics …, 2011 - pubs.aip.org
Using in-situ microscopy, we show that germanium nanowires can be grown by a vapor-
liquid-solid process in< 110> directions both on Ge (100) and Ge (111) substrates if very low …
liquid-solid process in< 110> directions both on Ge (100) and Ge (111) substrates if very low …
In-plane epitaxial growth of self-assembled Ge nanowires on Si substrates patterned by a focused ion beam
IC Marcus, I Berbezier, A Ronda, MI Alonso… - Crystal growth & …, 2011 - ACS Publications
We report a novel method for obtaining ordered arrays of self-assembled Ge nanowires
(NWs) using Au seed catalysts, with the latter deposited using a focused ion beam (FIB). For …
(NWs) using Au seed catalysts, with the latter deposited using a focused ion beam (FIB). For …
Controlled faceting in< 110> germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth
M Kolíbal, R Kalousek, T Vystavěl, L Novák… - Applied Physics …, 2012 - pubs.aip.org
We show that the hexagonal cross-section of germanium nanowires grown in the< 110>
direction by physical vapor deposition is a consequence of minimization of surface energy of …
direction by physical vapor deposition is a consequence of minimization of surface energy of …
Investigation of optoelectronic properties in germanium nanowire integrated silicon substrate using kelvin probe force microscopy
HM Singh, B Choudhuri… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Catalyst free Germanium (Ge) nanowires (NW) and thin film (TF) have been synthesized by
employing GLAD technique inside an electron-beam evaporator. X-ray diffraction patterns …
employing GLAD technique inside an electron-beam evaporator. X-ray diffraction patterns …
Germanium nanowire growth controlled by surface diffusion effects
J Schmidtbauer, R Bansen, R Heimburger… - Applied Physics …, 2012 - pubs.aip.org
Germanium nanowires (NWs) were grown onto Ge (111) substrates by the vapor-liquid-solid
process using gold droplets. The growth was carried out in a molecular beam epitaxy …
process using gold droplets. The growth was carried out in a molecular beam epitaxy …