The emerging nonvolatile memory technologies based on ferroic materials are promising for
producing high‐speed, low‐power, and high‐density memory in the field of integrated …

Emerging classes of flexible electronic systems that can be attached to a wide range of
surfaces from wearable clothes to internal organs have driven significant advances in …

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to
realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers …

Neuro‐inspired computing using emerging memristors plays an increasingly significant role
for the realization of artificial intelligence and thus has attracted widespread interest in the …

The cycling endurance of phase-change memory is one of the last hurdles to overcome to
enable its adoption in the larger market for persistent memory products. Phase-change …

The sneak path current (SPC) is the inevitable issue in crossbar memory array while
implementing high-density storage configuration. The crosstalks are attracting much …

Ge–Sb–Se–Te (GSST) quaternary films were prepared through atomic layer deposition
(ALD) to ensure their amorphous stability for ovonic threshold switching (OTS) applications …

This paper presents preparation of boron‐doped Al2O3 thin films by atomic layer deposition
(ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors …

As an outstanding two-dimensional (2D) semiconductor among III–V compounds, InAs has
attracted significant attention due to its much higher electron mobility than silicon and …

This paper reports the first experimental demonstration of a new concept of double magnetic
tunnel junctions comprising a magnetically switchable assistance layer. These double …