A comprehensive review (ca. 230 references) is presented of the present (1983) state of
knowledge of paramagnetic defects in crystalline quartz, as derived from electron …

It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …

McKeever gives us a comprehensive survey of thermoluminescence, an important, versatile,
and widely-used experimental technique. Bringing together previously isolated specialized …

The spectroscopic properties, structure and interconversions of optically active oxygen-
deficiency-related point defects in vitreous silica are reviewed. These defects, the E …

In this paper we review the subject of oxide breakdown (BD), focusing our attention on the
case of the gate dielectrics of interest for current Si microelectronics, ie, Si oxides or …

Physical Chemistry of the Academy of Sciences of the GDR where he established theoretical
research on intermolecular interactions in adsorption and catalytic processes. His favorite …

Hydrogen-related defects and oxygen vacancies in silica are analyzed using first-principles
density-functional calculations. Energetics, structures, charge-state levels, and hyperfine …

Luminescence centers causing optical absorption bands in the 5 eV region in oxygen-
deficient pure ('Si-doped'), as well as in Ge-and Sn-doped glassy SiO 2 were studied. The …

The discovery of strong luminescence at room temperature from silicon cluster has attracted
an enormous attention in recent years due to its potential applications in Si-based …

Hydrogen-related defects in oxygen-deficient silica, representing the material of a thermal
gate oxide, are analyzed using first-principles calculations. Energetics and charge-state …