Condition monitoring (CM) of power semiconductor devices enhances converter reliability
and customer service. Many studies have investigated the semiconductor devices failure …

Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …

This article introduces a holistic and systematic design methodology tailored to the 10 kV
silicon carbide (SiC) mosfet power modules. Multiobjective optimization was achieved with …

Multichip SiC power modules with Kelvin-source connection are popular in applications with
large capacity and high switching frequency. However, dynamic current imbalance among …

In high-current applications such as traction inverters, SiC mosfet s are paralleled to
increase the current rating. One major issue with paralleling SiC mosfet s is the dynamic …

The dynamic current imbalance between paralleled SiC mosfet s will cause unbalanced
losses and reduce current capacity. The existing current balancing methods will make the …

This article evaluates silicon carbide (SiC) mosfet's reliability and ruggedness
comprehensively between two widely employed device package types: common source and …

The overheating stress of power devices is the main cause of converter system failures, so
real-time temperature acquisition, as well as timely over-temperature protection, under …

Parallel operation of silicon carbide (SiC) metal oxide semiconductor field effect transistors
MOSFET s is necessary for high power applications. However, the dynamic current sharing …

Dynamic current imbalance of parallel SiC MOSFETs can lead to uneven losses and even
thermal runaway. Unbalanced parasitic parameters dominated by layout are one of the main …