Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …

Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …

Using a combination of deep level transient spectroscopy, secondary ion mass
spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar …

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …

Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …

The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

Deep acceptor doping of β-Ga 2 O 3 with Mg and N was demonstrated by implantation of the
impurity ions into n-type bulk substrates. Systematic physical and electrical characterizations …