Impact of strategic approaches for improving the device performance of mesa-shaped nanoscale vertical-channel thin-film transistors using atomic-layer deposited In …
The effect of two strategic approaches, such as modification of active layer geometry and
control of active channel composition, were investigated to improve the on/off ratio …
control of active channel composition, were investigated to improve the on/off ratio …
Geometrical and structural design schemes for trench-shaped vertical channel transistors using atomic-layer deposited In-Ga-Zn-O
Trench-structured In-Ga-Zn-O vertical thin-film transistors (T-VTFT) was fabricated with a
channel length of 400 nm. T-VTFTs showed channel width-dependent field-effect mobility …
channel length of 400 nm. T-VTFTs showed channel width-dependent field-effect mobility …
Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator
We fabricated vertical channel thin film transistors (VTFTs) with a channel length of 130 nm
using an ALD In–Ga–Zn–O (IGZO) active channel and high-k HfO 2 gate insulator layers …
using an ALD In–Ga–Zn–O (IGZO) active channel and high-k HfO 2 gate insulator layers …
Low leakage current vertical thin-film transistors with InSnO-stabilized ZnO channel
Vertical channel InSnO (ITO)-stabilized ZnO thin-film transistors (TFTs) with a channel length
of 300 nm were developed and fabricated. These TFT devices exhibited low off-state …
of 300 nm were developed and fabricated. These TFT devices exhibited low off-state …
[HTML][HTML] Effect of source–drain contact and channel length on the performance of vertical thin-film transistors
XM Yin, DL Lin, YP Yan, Y Li, WM Ma - AIP Advances, 2023 - pubs.aip.org
Vertical thin-film transistors (V-TFTs) with an InSnO-stabilized ZnO channel were fabricated.
The vertical architecture enables devices with submicron channel lengths (≤ 500 nm) to …
The vertical architecture enables devices with submicron channel lengths (≤ 500 nm) to …
CMP characteristics of IGZO thin film with a variety of process parameters
W Wang, M Zeng, C Tian, H Sun, K Cui… - Japanese Journal of …, 2024 - iopscience.iop.org
Recently, amorphous indium gallium zinc oxide (a-IGZO) has been studied in the field of 3D
transistors as a channel material for high mobility, good uniformity, and low leakage current …
transistors as a channel material for high mobility, good uniformity, and low leakage current …
[图书][B] Doping and Conformal Non-Planar Growth of 2D Semiconductors
CJ McClellan - 2021 - search.proquest.com
To overcome the limitations of conventional transistor size scaling, recent proposals have
been made to increase transistor density by vertically stacking transistors, in three …
been made to increase transistor density by vertically stacking transistors, in three …
Vertical Channel ITO-stabilized ZnO Thin-Film Transistors
Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm
were successfully fabricated. These devices show good electrical performance with a small …
were successfully fabricated. These devices show good electrical performance with a small …