Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …

The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired
researchers toward semiconducting applications. WSe2 belongs to a family of transition …

An Au/GaN photoelectrode was prepared by sputtering 30 nm thick Au film on the surface of
n-type gallium nitride (GaN). When the electrode contacts with multilayered molybdenum …

A gold nanoparticle (AuNPs)/gallium nitride (GaN) Schottky junction was fabricated by
growing AuNPs in situ on the surface of GaN and then etched by H2O2 to appropriate …

Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride
(GaN) and its photodetection properties have been reported in the present work. Surface …

Interest in bringing p-and n-type monolayer semiconducting transition metal
dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial …

Fabricating a two-dimensional (2D) van der Waals heterostructure is an efficient strategy to
improve the photoelectric performance of 2D materials, thus providing a new possibility for …

Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid
the foundation for various applications of atomically thin layer films. These 2D materials …

Both β-Ga 2 O 3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively.
We calculated the in-plane lattice mismatch between the (− 201) plane of β-Ga 2 O 3 and the …

In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …