Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires
Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …
infrared devices due to their tunable narrow bandgap and compatibility with silicon …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Extended-SWIR photodetection in all-group IV core/shell nanowires
Group IV Ge1–x Sn x semiconductors hold the premise of enabling broadband silicon-
integrated infrared optoelectronics due to their tunable band gap energy and directness …
integrated infrared optoelectronics due to their tunable band gap energy and directness …
[HTML][HTML] Electrical characterization of germanium nanowires using a symmetric hall Bar configuration: size and shape dependence
The fabrication of individual nanowire-based devices and their comprehensive electrical
characterization remains a major challenge. Here, we present a symmetric Hall bar …
characterization remains a major challenge. Here, we present a symmetric Hall bar …
Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors
Achieving high crystalline quality germanium‐tin (Ge1− xSnx) semiconductors at Sn content
exceeding 10% is quintessential to implement the long sought‐after silicon‐compatible mid …
exceeding 10% is quintessential to implement the long sought‐after silicon‐compatible mid …
[HTML][HTML] Remarkably high-performance nanosheet GeSn thin-film transistor
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power
display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is …
display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is …
Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors
Ge1–x Sn x nanowires incorporating a large amount of Sn would be useful for mobility
enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for …
enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for …
Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge: H layer and SnO2 nanoparticles
Abstract Alloying Ge with Sn is one of the promising ways for achieving Si compatible
optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a …
optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a …
Rational control of GeSn nanowires
R Gong, L Zheng… - physica status solidi …, 2022 - Wiley Online Library
Research on Si compatible direct bandgap semiconductors is a hot topic due to the high
demand of Si compatible optoelectronics. The group IV compounds, namely GeSn, has …
demand of Si compatible optoelectronics. The group IV compounds, namely GeSn, has …
Influence of longitudinal vibrations of the pulsation fields of long-wave Marangoni convection in thin film
IV Volodin, AA Alabuzhev - American Institute of Physics …, 2020 - ui.adsabs.harvard.edu
A thin film on a solid surface heated from below is considered. The surface performs
longitudinal harmonic vibrations with a given frequency and amplitude. The equations …
longitudinal harmonic vibrations with a given frequency and amplitude. The equations …