Gallium nitride (GaN) is an emerging wide-bandgap material with superior physical
characteristics, including critical electric field, electron mobility, and specific on-resistance …

The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

The remote sensing and satellite community working for space organizations have
expressed interest in building advanced devices with potential choices for Gallium Nitride …

While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs),
the question remains on the extent of damage governed by the presence of an electrical …

In this article, the impact of gamma () irradiation on passivated and unpassivated
AlGaN/GaN HEMT is presented in detail. Passivated and unpassivated GaN-HEMT devices …

The results presented in this article relate to the study of the impact of gamma radiation on
the breakdown voltage of gas-filled surge arrester manufactured by CITEL, Littelfuse and …

We report thermal and mechanical responses accompanying electrical characteristics of
depletion mode GaN high electron mobility transistors exposed to gamma radiation up to 10 …

Strain localization in microelectronic devices commonly arises from device geometry,
materials, and fabrication processing. In this study, we controllably relieve the local strain …

We investigate the effects of high-rate and high total doses of 60 Co gamma rays on the
current–voltage (IV) characteristics of GaN p+ n diodes grown by metal-organic chemical …

The ever-increasing demands on the efficiency and power density of power electronics
converters lead to the replacement of traditional silicon-based components with new …