A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
Recent progress in phase-change memory technology
GW Burr, MJ Brightsky, A Sebastian… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
We survey progress in the PCM field over the past five years, ranging from large-scale PCM
demonstrations to materials improvements for high–temperature retention and faster …
demonstrations to materials improvements for high–temperature retention and faster …
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …
outstanding properties, which has led to their successful use for a long time in optical …
Enabling active nanotechnologies by phase transition: from electronics, photonics to thermotics
Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and
chalcogenides when there is a change in external conditions such as temperature and …
chalcogenides when there is a change in external conditions such as temperature and …
Design rules for phase‐change materials in data storage applications
Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …
and a crystalline phase. Since both phases are characterized by very different optical and …
Dihalide germanium (II) precursors for germanium-containing film depositions
J Gatineau, A Zauner, H Ishii - US Patent 8,691,668, 2014 - Google Patents
JutZi, P. et al.,“Stabilization of monomeric dichlorogermylene,” Angew, Chem. Int'l, Edit. vol.
12 (1973), No. 12, 1002-1003. JutZi, P. et al.,“Zur reaktivitat der Is-C-bindung in …
12 (1973), No. 12, 1002-1003. JutZi, P. et al.,“Zur reaktivitat der Is-C-bindung in …
Recent advances in synaptic nonvolatile memory devices and compensating architectural and algorithmic methods toward fully integrated neuromorphic chips
Nonvolatile memory (NVM)‐based neuromorphic computing has been attracting
considerable attention from academia and the industry. Although it is not completely …
considerable attention from academia and the industry. Although it is not completely …
Self-aligned nanotube–nanowire phase change memory
A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the
smallest and most energy-efficient devices that can function reliably. Unlike charge-based …
smallest and most energy-efficient devices that can function reliably. Unlike charge-based …
In Situ Studies on Reaction Mechanisms in Atomic Layer Deposition
K Knapas, M Ritala - Critical reviews in solid state and materials …, 2013 - Taylor & Francis
During the past decade, atomic layer deposition (ALD) has become an important thin-film
deposition method in microelectronics industry, and it has also gained a lot of interest in …
deposition method in microelectronics industry, and it has also gained a lot of interest in …
Precursors as enablers of ALD technology: Contributions from University of Helsinki
T Hatanpää, M Ritala, M Leskelä - Coordination Chemistry Reviews, 2013 - Elsevier
The review focuses on ALD precursors of selected elements such as alkaline earth (Mg, Ca,
Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These …
Sr, Ba), group 4 metals, bismuth, silver, iridium, selenium, tellurium and antimony. These …