US8859047B2 - Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
- Google Patents US8859047B2 - Use of ruthenium tetroxide as a precursor and reactant for …

We report on the effects on water oxidation performance of varying (1) the nanoscale TiO2
thickness and (2) the catalyst material in catalyst/TiO2/SiO2/Si anodes. Uniform films of …

The ultrathin and continuous ruthenium (Ru) film was deposited through an improved atomic
layer deposition (ALD) process with a discrete feeding method (DFM), called DF-ALD …

Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition
(PE-ALD) using O2 and ammonia (NH3) plasma, respectively. RuCp2 and Ru (EtCp) 2 were …

Atomic layer deposition (ALD) and pulsed chemical vapor deposition (CVD) were used to
make ruthenium (Ru) thin films from a volatile Ru amidinate precursor, bis (-di-tert …

The nucleation behavior of Ru deposited by atomic layer deposition (ALD) using bis
(ethylcyclopentadienyl) ruthenium precursor and O 2 reactant is investigated as a function of …

High-k gate dielectrics are used to suppress excessive transistor gate leakage and power
consumption could speed up the introduction of metal gates in complementary metal oxide …

The effect of the oxygen exposure on ruthenium atomic layer deposition (ALD) was
investigated. Ru ALD was carried out using bis (cyclopentadienyl) ruthenium and oxygen …

The formation of Ru nanocrystals is demonstrated on a Si O 2 substrate by plasma
enhanced atomic layer deposition using diethylcyclopentadienyl ruthenium and NH 3 …

The oxide/semiconductor interface state density (D it) in Al 2 O 3/AlGaN/GaN metal-oxide-
semiconductor high-electron mobility transistor (MOS-HEMT) structures with gate oxides …