Gain-cell embedded DRAM under cryogenic operation—A first study

E Garzón, Y Greenblatt, O Harel… - … Transactions on Very …, 2021 - ieeexplore.ieee.org
Operating circuits under cryogenic conditions is effective for a large spectrum of
applications. However, the refrigeration requirement for the cooling of cryogenic systems …

Current-based data-retention-time characterization of gain-cell embedded DRAMs across the design and variations space

R Giterman, A Bonetti, EV Bravo, T Noy… - … on Circuits and …, 2020 - ieeexplore.ieee.org
The rise of data-intensive applications has resulted in an increasing demand for high-
density and low-power on-chip embedded memories. Gain-cell embedded DRAM (GC …

A 24 kb single-well mixed 3T gain-cell eDRAM with body-bias in 28 nm FD-SOI for refresh-free DSP applications

J Narinx, R Giterman, A Bonetti… - 2019 IEEE Asian …, 2019 - ieeexplore.ieee.org
Logic-compatible gain-cell embedded DRAM (GC-eDRAM) is an emerging alternative to
conventional SRAM for memory-dominated system-on-chip (SoC) designs due to its high …

Pseudo-Static Gain Cell of Embedded DRAM for Processing-in-Memory in Intelligent IoT Sensor Nodes

S Kim, JE Park - Sensors, 2022 - mdpi.com
This paper presents a pseudo-static gain cell (PS-GC) with extended retention time for an
embedded dynamic random-access memory (eDRAM) macro for analog processing-in …

FinFET based ultra-low power 3T GC-eDRAM with very high retention time in sub-22 nm

B Seyedzadeh Sany, B Ebrahimi - Analog Integrated Circuits and Signal …, 2022 - Springer
This paper presents an ultra-low power 3T gain-cell embedded DRAM (GC-eDRAM) cell in
fin field-effect transistor (FinFET). This memory structure uses fast and low leakage FinFET …

Gain-cell embedded DRAMs: Modeling and design space

A Bonetti, R Golman, R Giterman… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Among the different types of dynamic random-access memories (DRAMs), gain-cell
embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative …

GC-eDRAM design using hybrid FinFET/NC-FinFET

R Rajaei, YK Lin, S Salahuddin, M Niemier… - Proceedings of the ACM …, 2020 - dl.acm.org
Gain cell embedded DRAMs (GC-eDRAM) are a potential alternative for conventional static
random access memories thanks to their attractive advantages such as high density, low …

Replica bit-line technique for internal refresh in logic-compatible gain-cell embedded DRAM

O Harel, Y Nachum, R Giterman - Microelectronics Journal, 2020 - Elsevier
Embedded memories, mostly implemented with static random access memory (SRAM),
dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC …

Augmented Memory Computing: Dynamically Augmented SRAM Storage for Data Intensive Applications

H Sheshadri, S Vijayakumar, A Jacob… - arXiv preprint arXiv …, 2021 - arxiv.org
In this paper, we propose a novel memory-centric scheme based on CMOS SRAM for
acceleration of data intensive applications. Our proposal aims at dynamically increasing the …

Augmented memory computing: a new pathway for efficient ai computations

AP Jacob, A Jaiswal - US Patent App. 18/571,407, 2024 - Google Patents
US20240282366A1 - Augmented memory computing: a new pathway for efficient ai
computations - Google Patents US20240282366A1 - Augmented memory computing: a …