The integration density of electronic systems is limited by the reliability of the integrated
circuits. To guarantee the overall performance, the integrated circuit reliability must be …

The interaction of charge carriers with hydrogen-related defects plays a key role in modern
semiconductor applications. Particularly in the field of micro-and nanoelectronics, where …

We develop and validate a fully analytical model for hot-carrier degradation based on a
thorough description of the physical picture behind this reliability phenomenon. This …

With the size down and integration of power devices, the internal thermal management
problem has become particularly severe. Especially in the channel region, significant heat …

This paper proposes an equivalent circuit model for simulating the Hot Carrier Injection
(HCI) effect. This model is developed based on the N-FinFET in the 12 nm Process Design …

A detailed simulation of degradation (caused by hot charge carriers) based on self-
consistent consideration of the transport of charge carriers and the generation of defects at …

We review macroscopic transport models as used in classical device simulation such as drift-
diffusion, hydrodynamic, and energy transport models. Using a systematic approach, these …

The effect of the geometric parameters of Fin field-effect transistors (FinFETs) on hot-carrier
degradation (HCD) in these devices is theoretically studied. To this end, a model is used, in …

The characterization of impact-ionization (II) and stress-induced damage in 28-nm bulk n-
channel MOSFETs is used to identify the mechanisms for carrier-induced interface trap …

In this Chapter, we focus on the concept of performance variation in digital systems and
discuss its sources, mainly the interdependence with certain phenomena manifesting in the …