This paper presents a TCAD based investigation of virtually fabricated Π-shaped Gate p-
GaN HEMT for reliable enhancement mode operation. A detailed comparison with the …

Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising
for power switching applications, with advantages of low energy consumption and safe …

In the gallium nitride (GaN) commercial applications such as high-power illumination and
portable charging station, bipolar devices are highly demanded because of their superior …

As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility
transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency …

This article analyzes the energy loss E loss in GaN enhancement-mode (E-mode) devices
under unclamped inductive switching (UIS) stresses. Based on the second-order circuit …

This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to
improve breakdown voltage (BV) and threshold voltage (V TH) stability. The clamping …

In this paper, we demonstrate a high voltage normally-off p-GaN gate high-electron-mobility-
transistor (HEMT) to realize the compatible high threshold voltage (V TH) and high drain …

This article proposes a novel power p-GaN high-electron-mobility transistor (HEMT) with self-
triggered discharging channel to improve gate-to-source electrostatic discharge (ESD) …

Short-circuit (SC) robustness is an important concern for power devices in switching mode
power supplies. For individual transistors such as Si and SiC MOSFETs, the SC capability …

In this article, an analytical model of the buffer charge (BC) effect is presented for the 2-D
electron-gas (2DEG) density (prediction in AlGaN/GaN high-electron-mobility-transistor …