Hexagonal boron nitride (hBN) monolayers have attracted considerable interest as
atomically thin sp 2-hybridized sheets that are readily synthesized on various metal …

In this paper, a perspective on the application of Spatially-and Angle-Resolved
PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is …

Liquids confined down to the atomic scale can show radically new properties. However, only
indirect and ensemble measurements operate in such extreme confinement, calling for …

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great
potential for technological applications like efficient deep ultraviolet light sources, building …

Epitaxy growth and mechanical transfer of high‐quality III‐nitrides using 2D materials,
weakly bonded by van der Waals force, becomes an important technology for semiconductor …

In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from
indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast …

Dispersionless energy bands in k space are a peculiar property gathering increasing
attention for the emergence of novel electronic, magnetic, and photonic properties. Here, we …

We present an ab initio method to calculate phonon-assisted absorption and emission
spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal …

The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the
development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this …

Hexagonal boron nitride (hBN) has been attracting great attention because of its strong
excitonic effects. Taking into account few-layer systems, we investigate theoretically the …