The non-volatile magnetoresistive random access memory (MRAM) is believed to facilitate
emerging applications, such as in-memory computing, neuromorphic computing and …

We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd 3 As
2 nanoplates through measurements of the third-order nonlinear Hall effect. Under an …

The linear intrinsic anomalous Hall effect (IAHE) and second-order IAHE have been
intensively investigated in time-reversal broken systems. However, as one of the important …

Time reversal and inversion symmetric materials fail to yield linear and nonlinear responses
since they possess net zero Berry curvature. However, higher-order Hall response can be …

In two-dimensional systems, perpendicular magnetic fields can induce a bulk band gap and
chiral edge states, which gives rise to the quantum Hall effect. The quantum Hall effect is …

We study Berry connection polarizability (BCP) induced electric polarization and the third-
order Hall (TOH) effect in a two-dimensional electron/hole gas (2DEG/2DHG) with Rashba …

The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band
geometry and its potential applications in current rectification. Recent discoveries have …

Nonlinear transport phenomena offer an exciting probe into the topology and band geometry
of the system. Here, we investigate the intrinsic third-order nonlinear responses …

Berry curvature, a momentum space property, can manifest itself in current responses. The
well-known anomalous Hall effect in time-reversal-breaking systems arises from a Berry …

In this doctoral Thesis, we investigate theoretically the nonlinear electronic response of non-
centrosymmetric systems, such as the higher order Hall response in non-magnetic materials …