High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate
We report the results of a device performance of a boron-doped diamond metal
semiconductor field effect transistor (MESFET) grown on a heteroepitaxial diamond …
semiconductor field effect transistor (MESFET) grown on a heteroepitaxial diamond …
Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate
In this study, diamond Schottky barrier diodes (SBDs) fabricated on a sapphire-based
heteroepitaxial diamond substrate were demonstrated. For commercializing diamond-based …
heteroepitaxial diamond substrate were demonstrated. For commercializing diamond-based …
Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate
We evaluated the performance of a diamond Schottky barrier diode (SBD) fabricated on a
high-quality 7° off-axis heteroepitaxial (001) diamond substrate. The self-separated free …
high-quality 7° off-axis heteroepitaxial (001) diamond substrate. The self-separated free …
Nanoindentation of boron-doped diamond on (001) crystal plane by molecular dynamics simulations
X Liu, W Peng, S Shen, Z Deng - Diamond and Related Materials, 2024 - Elsevier
Boron-doped diamond is a crucial material for ultra-precision devices, with its mechanical
properties and internal defect distribution being key factors that impact the efficiency and …
properties and internal defect distribution being key factors that impact the efficiency and …
[PDF][PDF] 高质量硼掺杂单晶金刚石同质外延及电学性质研究
王若铮， 闫秀良， 彭博， 林芳， 魏强， 王宏兴 - 人工晶体学报, 2022 - researching.cn
突破高质量, 高效金刚石掺杂技术是实现高性能金刚石功率电子器件的前提.
本文利用微波等离子体化学气相沉积(MPCVD) 法, 以三甲基硼为掺杂源, 制备出表面粗糙度0 …
本文利用微波等离子体化学气相沉积(MPCVD) 法, 以三甲基硼为掺杂源, 制备出表面粗糙度0 …