We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon
transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide …

Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting
1200 V power applications is reported. In particular, it is shown that the insertion of …

High voltage GaN based transistors already showed promising device properties which
makes them very attractive for future highly efficient power switching application. To further …

The influence of different C-doping locations in a GaN/Si structure with a GaN/AlN
superlattice (SL) buffer on the material and electrical properties of GaN/Si was studied. The …

In this study, a normally-off AlGaN/GaN metal–insulator–semiconductor field-effect transistor
(MIS-FET) based on the combination of tri-gate and recessed MIS gate is fabricated and …

In this study, a normally-on AlGaN/GaN metal–insulator-semiconductor high electron
mobility transistor (MIS-HEMT) and a normally-off AlGaN/GaN metal–insulator …

Effects of low energy electron beam irradiation (LEEBI) of planar and nanopillar InGaN/GaN
multiquantum well light emitting diode structures are discussed. The bands observed in …

Electrical properties of GaN films grown on Si by molecular beam epitaxy using various
types of strain-relieving layers have been studied by means of Hall/van der Pauw …

We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-
silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside …

Abstract [eng] The aim of this work is by using SRIM software packages find optimal ion
implantation conditions in order to make thermally stable isolation zones for high electron …