Single-crystal semiconductor layers can be grown with large coherency strains. This review
covers their standard elasticity theory and methods of measuring the strain. High-quality …

Although several types of architecture combining memory cells and transistors have been
used to demonstrate artificial synaptic arrays, they usually present limited scalability and …

In this work, a model is developed to treat threading dislocation (TD) reduction in (0001)
wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for …

The elucidation of the effects of structurally extended defects on electronic properties of
materials is especially important in view of the current advances in electronic device …

This article presents a theoretical analysis of dislocation behavior and stress relaxation in
semipolar III-nitride heteroepitaxy, eg, for Al x Ga 1− x N and In y Ga 1− y N layers grown on …

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm
diameter Si (111) substrates by using three different buffer layer configurations:(a) Thick …

The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Thermal cycle annealing (TCA) is introduced to accelerate the dislocation annihilation in
sputter-deposited AlN films on sapphire. Compared with constant temperature annealing …

Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012
(CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …

We propose and investigate a model for the development of cross-hatch surface morphology
in growing mismatched layers. The model incorporates two important elements:(i) strain …