Recent progress of rare earth oxides for sensor, detector, and electronic device applications: a review

MK Hossain, MH Ahmed, MI Khan… - ACS Applied …, 2021 - ACS Publications
Rare earth oxides (REOs) are deemed important from both industrial implementation and
research insight perspectives. One of the most conspicuous attributes of REOs is sensing …

Performance assessment of a new radiation dosimeter based on carbon nanotube field-effect transistor: A quantum simulation study

K Tamersit - IEEE Sensors Journal, 2019 - ieeexplore.ieee.org
In this paper, the performance of a new nanoscale radiation sensitive field-effect transistor
(RADFET) based on carbon nanotube (CNT) is investigated using an atomistic simulation …

Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors

A Mutale, SC Deevi, E Yilmaz - Journal of Alloys and Compounds, 2021 - Elsevier
In this work, Er 2 O 3 films deposited by electron beam (E-beam) evaporation technique
were annealed at 450° C, 550° C, and 650° C in N 2 atmosphere for 30 min. We then …

[HTML][HTML] A design concept for radiation hardened RADFET readout system for space applications

M Andjelkovic, A Simevski, J Chen, O Schrape… - Microprocessors and …, 2022 - Elsevier
Instruments for measuring the absorbed dose and dose rate under radiation exposure,
known as radiation dosi-meters, are indispensable in space missions. They are composed …

Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3)

U Gurer, O Yilmaz, H Karacali, S Kaya… - Radiation Physics and …, 2020 - Elsevier
Abstract Dysprosium Oxide (Dy 2 O 3) gate dielectric layers were deposited by Electron-
Beam evaporation onto p-Si (100) wafers. The effects of gamma irradiation on the physical …

Floating-gate MOS transistor with dynamic biasing as a radiation sensor

S Ilić, A Jevtić, S Stanković, G Ristić - Sensors, 2020 - mdpi.com
This paper describes the possibility of using an Electrically Programmable Analog Device
(EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the …

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

S Kaya, E Yilmaz - Semiconductor Science and Technology, 2019 - iopscience.iop.org
Frequency dependent electrical characteristics of Al/Dy 2 O 3/p-Si/Ag MOS capacitors have
been systematically investigated incorporating interfacial chemical structures of the …

Gamma radiation effects on diamond field-effect biosensors with fibroblasts and extracellular matrix

M Krátká, J Čermák, J Vachelová, M Davídková… - Colloids and Surfaces B …, 2021 - Elsevier
Due to high biocompatibility, miniaturization, optical transparency and low production cost
together with high radiation hardness the diamond-based sensors are considered promising …

Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3

C Chang, G Chen, G Shao, Y Wang, M Zhang… - Diamond and Related …, 2022 - Elsevier
A normally-off hydrogen-terminated diamond field effect transistor with an Er 2 O 3/Al 2 O 3
bilayer dielectric was fabricated. Dielectric materials Er 2 O 3 and Al 2 O 3 were deposited …

Characterization of heavily irradiated dielectrics for pixel sensors coupling insulator applications

S Bharthuar, M Golovleva, M Bezak, E Brücken… - Frontiers in …, 2022 - frontiersin.org
An increase in the radiation levels during the high-luminosity operation of the Large Hadron
Collider calls for the development of silicon-based pixel detectors that are used for particle …