This book is an outcome of my research publications during my teaching and research
career. The book is about basic understanding of the MOSFET devices and their physics at …

This work describes a design process, simulation, and analysis of a CMOS-based common
source amplifier circuit in the Cadence Virtuoso environment at the 45 nm technology node …

In this paper, a critical review of various models for the effective mobility of charge carriers in
metal oxide semiconductor field effect transistor (MOSFET) inversion layer (p and n type) …

This paper presents the design and analysis of a 1-bit Arithmetic Logic Unit (ALU) with and
without a full adder circuit. The objective of the study is to compare the outputs of the two …

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and
hence drain current. This paper presents an analytical model of the subthreshold drain …

This paper reports on the impact study with the variation of the gate insulation material and
thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate …

This paper presents the doping profile measurement and characterization technique for the
pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic …

Temperature fluctuations affect threshold voltage, carrier mobility and transit time of an n-
MOSFET. This phenomenon induces the variations of drain current in the device. This paper …

MOSFET with overwhelmingly doped regions toward one side or both completions of the
immediate show subjective differences in electrical direct appeared differently in relation to …

The term carrier mobility generally alludes to both electron and hole mobility in
semiconductors. These parameters characterize how quickly an electron and/or hole moves …