Quantum dots (QDs) have been explored for many photonic applications, both as emitters
and absorbers. Thanks to the bandgap tunability and ease of processing, they are prominent …

The predicted'Law 19'benchmark for HgCdTe photodiode performance established in 2019
is a milestone in the development of infrared (IR) detectors and make the dream of Elliott …

Image sensors made using silicon complementary metal–oxide–semiconductor technology
can be found in numerous electronic devices and typically rely on pinned photodiode …

Silicon-based complementary metal oxide semiconductor (CMOS) devices have dominated
the technological revolution in the past decades. With increasing demands in machine …

The dissemination of sensors is key to realizing a sustainable,'intelligent'world, where
everyday objects and environments are equipped with sensing capabilities to advance the …

Quantum confinement opens a large energy gap E g in HgTe nanocrystals (NCs), which is a
non-trivial semi-metal (E gbulk< 0) in the bulk crystal limit. In this context, we present a …

After the use of nanocrystals as light downconverters, infrared sensing appears to be one of
the first market applications where they can be used while being both electrically and …

We demonstrate a low-temperature synthesis of ultrasmall (< 2 nm) HgTe quantum dots
(QDs) with superlative optical properties in the near and shortwave infrared. The tunable …

PbS quantum dots (QDs) are promising for short-wave infrared (SWIR) photodetection and
imaging. Solid-state ligand exchange (SSLE) is a low-fabrication-threshold QD solid …

Within a few years, nanocrystal-based infrared devices have achieved significant progress
and advancements, including high-quality imaging systems. This raises the need to develop …