Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …

AlGaN LEDs emitting< 230 nm UV light were fabricated on sapphire substrates. We
employed a quantum well (QW) with an extremely thin barrier to enhance the quantum …

AlGaN-based deep UV (DUV) LEDs generally employ a p-type electron blocking layer (EBL)
to suppress electron overflow. However, Al-rich III-nitride EBL can result in challenging p …

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) have been identified as a
prospective mercury-free UV source. However, the observation of severe electron overflow …

It is generally known that the p-type AlGaN electron-blocking layer (EBL) can hinder hole
injection for near-ultraviolet light-emitting diodes (NUV-LEDs). Moreover, at the last quantum …

Realization of efficient InGaN-based green light-emitting diodes (LEDs) is highly desirable in
solid-state lighting industry. Here, we propose a stacked last quantum barrier (SLQB) …

The optical properties of AlGaN-based deep ultraviolet light-emitting diodes (DUV LED) with
step-graded AlInGaN last quantum barrier (LQB) are numerically studied. In contrast to …

The advantages of using an Al x Ga 1-x N carrier reservoir layer (CRL) instead of the
traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were …

In this paper, a deep ultraviolet light-emitting diodes (DUV LEDs) at∼ 275 nm with an
interval-graded barrier superlattice (IBSL) Electron Blocking Layer (EBL) has been proposed …

This work establishes the relationship between the electron energy and the electron
concentration within the multiple quantum wells (MQWs) for AlGaN based deep ultraviolet …