A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal - Superlattices and Microstructures, 2017 - Elsevier
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation
We report an in situ low-damage pre-gate treatment technology in an atomic layer
deposition (ALD) system prior to the ALD-\rmAl_2\rmO_3 deposition, to realize high-quality …
deposition (ALD) system prior to the ALD-\rmAl_2\rmO_3 deposition, to realize high-quality …
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
TE Hsieh, EY Chang, YZ Song, YC Lin… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold
voltage hysteresis using Al 2 O 3/AlN stack gate insulator is presented. The trapping effect of …
voltage hysteresis using Al 2 O 3/AlN stack gate insulator is presented. The trapping effect of …
GaN power IC technology on p-GaN gate HEMT platform
GaN power ICs provide an elegant solution for high-frequency power switching applications.
This paper will first discuss the GaN power integration platform, which requires not only a …
This paper will first discuss the GaN power integration platform, which requires not only a …
AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs
Effective interface trap characterization approaches are indispensable in the development of
gate stack and dielectric surface passivation technologies in III-nitride (III-N) insulated-gate …
gate stack and dielectric surface passivation technologies in III-nitride (III-N) insulated-gate …
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
We report the interface characterization of Al 2 O 3/AlN/GaN MOS (metal-oxide-
semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial …
semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial …