With the technological advancement in micro-electro-mechanical systems (MEMS),
microfabrication processes along with digital electronics together have opened novel …

Understanding the mechanical behavior of silicon nanowires is essential for the
implementation of advanced nanoscale devices. Although bending tests are predominantly …

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their
successful utilization as transducer building blocks in next-generation, miniaturized sensors …

Silicon nanowires are among the most promising nanotechnology building blocks in
innovative devices with numerous applications as nanoelectromechanical systems …

This study investigates the fabrication and characterization of an innovative
nanoelectromechanical system force sensor that utilizes suspended submicron silicon …

This study compares six widely used classical many-body potentials–Tersoff-T3, Stillinger–
Weber, modified Tersoff, optimized modified Tersoff, environment-dependent interatomic …

Complex yet compact nanoscale mechanisms have largely been absent due to the rather
limited availability of components and integration techniques. Especially missing have been …

A primary challenge to use silicon nanowires as a truly potential building block in nanoscale
devices is the implementation of scale effects into operational performance. Therefore …

Strain engineering is a key technology to continue Moore's law with silicon or any other
foreseen semiconductor in very large scale integration. The characterization of strain in …

Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous
piezoresistive (PZR) effects. Although the PZR effects of SiNWs have been extensively …