The misfit strain relaxation via generation of partial and perfect misfit dislocations and their
dipoles at the interface in core-shell nanowires with faceted cores is considered. The core …

We reveal the feasibility of the localized surface plasmon resonance in a system of Bi
nanoparticles embedded into an Al x Ga 1− x As semiconductor matrix. With an ab initio …

We develop a new technique for finding elastic fields for axisymmetric dilatational inclusions
(DIs) in the forms of finite cylinder and truncated sphere, when the DIs and surrounding …

In this work, we investigate the epitaxial growth of InAs quantum dots (QDs) on Ge
substrates. By varying the growth parameters of growth temperature, deposition thickness …

We discuss various mechanisms of misfit stress relaxation in elastically inhomogeneous
core–shell nanoparticles. For some of the mechanisms, which are the formation of a …

We develop a model of an epitaxial self-organized InGaAs quantum dot buried in GaAs,
which takes into account experimentally determined indium distribution inside the QD, its …

We investigate in detail the role of strain relaxation and capping overgrowth in the self-
assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In …

We have elucidated the microstructure of Al 0.28 Ga 0.72 As 0.972 Sb 0.028 metamaterial
containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by …

We present a quantitative transmission electron microscopy (TEM) study about the interface
structure and strain state of buried InAs nano-clusters in Si (001) grown by molecular beam …

Due to the doping of SrZrO 3 nanoparticles, the performance improvement of Bi 2 Sr 2 CaCu
2 O 8+ δ (Bi-2212) high-temperature ceramic superconducting films is significant. To …