Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures
C Yu, H Wang - Sensors, 2010 - mdpi.com
The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect
very small displacements due to its output of lateral photovoltage changing linearly with light …
very small displacements due to its output of lateral photovoltage changing linearly with light …
Lateral photovoltaic effect based on novel materials and external modulations
S Qiao, B Liang, J Liu, G Fu… - Journal of physics D …, 2021 - iopscience.iop.org
With the development of nanoengineering and nanotechnology, numerous emerging
materials and constructions are being presented in optoelectronics to challenge traditional …
materials and constructions are being presented in optoelectronics to challenge traditional …
Graphene-based infrared position-sensitive detector for precise measurements and high-speed trajectory tracking
Noncontact optical sensing plays an important role in various applications, for example,
motion tracking, pilotless automobile, precision machining, and laser radars. A device with …
motion tracking, pilotless automobile, precision machining, and laser radars. A device with …
Ultrasensitive broadband position-sensitive detector based on graphitic carbon nitride
X Chen, X Yang, Q Lou, Y Tian, Z Liu, C Lv, Y Chen… - Nano Research, 2023 - Springer
As a typical two-dimensional material, graphitic carbon nitride (g-CN) has attracted great
interest because of its distinctive electronic, optical, and catalytic properties. However, the …
interest because of its distinctive electronic, optical, and catalytic properties. However, the …
Improvement in Performance and Stability of PbS QD/IGZO Phototransistors Through the Introduction of Ga2O3 Film for Broadband Sensor Applications
The development of broadband photosensors has become crucial in various fields. Indium–
gallium–zinc oxide (IGZO, In: Ga: Zn= 1: 1: 1) phototransistors with PbS quantum dots (QDs) …
gallium–zinc oxide (IGZO, In: Ga: Zn= 1: 1: 1) phototransistors with PbS quantum dots (QDs) …
High-performance position-sensitive detector based on graphene–silicon heterojunction
W Wang, Z Yan, J Zhang, J Lu, H Qin, Z Ni - Optica, 2018 - opg.optica.org
Position-sensitive detectors (PSDs) based on the lateral photo effect have been widely used
in diverse applications including optical engineering, aerospace, and military fields. With …
in diverse applications including optical engineering, aerospace, and military fields. With …
Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions
S Qiao, B Zhang, K Feng, R Cong, W Yu… - … applied materials & …, 2017 - ACS Publications
Molybdenum disulfide (MoS2), as a typical two-dimensional (2D) material, has attracted
extensive attention in recent years because of its fascinating optical and electric properties …
extensive attention in recent years because of its fascinating optical and electric properties …
Interfacial amplification for graphene-based position-sensitive-detectors
Position-sensitive-detectors (PSDs) based on lateral photoeffect have been widely used in
diverse applications 1– 9, including optical engineering, aerospace and military fields. With …
diverse applications 1– 9, including optical engineering, aerospace and military fields. With …
Thin‐film amorphous silicon position‐sensitive detectors
J Henry, J Livingstone - Advanced materials, 2001 - Wiley Online Library
Optical position‐sensitive detectors are a useful class of sensor with a wide range of
applications in machine control systems, industrial alignment, and robotic vision. They have …
applications in machine control systems, industrial alignment, and robotic vision. They have …
2D position-sensitive hybrid-perovskite detectors
Hybrid organic–inorganic perovskites (HOIPs) have emerged as a versatile class of
semiconductors for numerous optoelectronic applications. Here, we demonstrate light …
semiconductors for numerous optoelectronic applications. Here, we demonstrate light …