High-k dielectrics for 4H-silicon carbide: present status and future perspectives
A Siddiqui, RY Khosa, M Usman - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Owing to its superior material and electrical properties such as wide bandgap and high
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …
materials have already found application in microelectronics, mainly as gate insulators or …
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Abstract 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
[HTML][HTML] Low-pressure oxidation for improving interface properties and voltage instability of SiO2/4H-SiC MOS capacitor
Z Wang, Z Lin, J Li, W Liu - Applied Surface Science, 2025 - Elsevier
The impact of high-temperature sub-atmospheric oxidation pressure on the interface
properties of n-type 4H-SiC metal–oxide–semiconductor capacitors has been systematically …
properties of n-type 4H-SiC metal–oxide–semiconductor capacitors has been systematically …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate
H Huang, Y Wang, KH Chen… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
In this study, we investigate the deposition of high-k dielectric materials, namely Al2O3 and
HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications. CV …
HfO2, using atomic layer deposition for 4H-SiC metal-oxide-semiconductor applications. CV …
Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack
High-performance 4H-SiC MOSFETs have been fabricated, having a peak effective mobility
of 265 cm 2/s, and a peak field effect mobility of 154 cm 2/V s, in 2-m gate length MOSFETs …
of 265 cm 2/s, and a peak field effect mobility of 154 cm 2/V s, in 2-m gate length MOSFETs …
Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods
L Li, S He, H Ruan, S He, D Guo - Surfaces and Interfaces, 2023 - Elsevier
To comprehensively reveal the microscopic properties of the 4H-SiC/α-Al 2 O 3 interface, not
only the properties of 4H-SiC and α-Al 2 O 3 surfaces, but also the interface separation work …
only the properties of 4H-SiC and α-Al 2 O 3 surfaces, but also the interface separation work …
Incorporation of green solvent for low thermal budget flower-like Copper (I) Iodide (γ-CuI) for high-efficiency solar cell
High conductivity, density, and uniform Copper (I) Iodide (CuI) as Hole Transporting Layer
(HTL) was prepared directly on an Indium-doped Tin Oxide (ITO) substrate. A new green …
(HTL) was prepared directly on an Indium-doped Tin Oxide (ITO) substrate. A new green …
[HTML][HTML] High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500° C using SiO2/SiNx/Al2O3 gate stacks
In this work, 4H-SiC lateral metal-insulator-semiconductor field-effect transistors (MISFETs)
were demonstrated to operate up to 500 C with a high on/off current ratio (over 10 9). A low …
were demonstrated to operate up to 500 C with a high on/off current ratio (over 10 9). A low …