Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Selective doping in silicon carbide power devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
Ion implantation doping in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
A critical review of theory and progress in Ohmic contacts to p-type SiC
L Huang, M Xia, X Gu - Journal of Crystal Growth, 2020 - Elsevier
Silicon carbide (SiC) is a promising candidate in high-temperature, high-frequency and high-
power applications due to its outstanding properties such as wide band gap, high critical …
power applications due to its outstanding properties such as wide band gap, high critical …
Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC
In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type
implanted silicon carbide (4H-SiC) were studied employing different techniques. With …
implanted silicon carbide (4H-SiC) were studied employing different techniques. With …
In-situ near-ambient-pressure photoelectron spectroscopy investigations of high-work-function MoO3 on 4H-SiC (0001)
How to realize effective Ohmic contact to SiC represents one of the major challenges for
high-power and high-frequency SiC electronics. Forming a high-work-function interfacial …
high-power and high-frequency SiC electronics. Forming a high-work-function interfacial …
Ohmic contacts on p-Type Al-Implanted 4H-SiC layers after different post-implantation annealings
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-
implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC …
implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC …
Metal/semiconductor contacts to silicon carbide: Physics and technology
The physics and technology of metal/semiconductor interfaces are key-points in the
development of silicon carbide (SiC) based devices. Although in the last decade, the metal …
development of silicon carbide (SiC) based devices. Although in the last decade, the metal …
Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment
M Masunaga, V Crescitelli… - Japanese Journal of …, 2020 - iopscience.iop.org
Long-term thermal stability of specific contact resistance (ρ c) in cross-bridge Kelvin resistors
(CBKRs), with an Al/TiN/Ti/Ni 2 Si/4H-SiC layered structure, was studied. In high …
(CBKRs), with an Al/TiN/Ti/Ni 2 Si/4H-SiC layered structure, was studied. In high …
Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si (111) substrate
WH Tham, DS Ang, LK Bera, SB Dolmanan… - Journal of Vacuum …, 2016 - pubs.aip.org
The authors report on the fabrication and characterization of low-temperature processed
gold-free Ohmic contacts for Al x Ga 1− x N/GaN high electron mobility transistors (HEMTs) …
gold-free Ohmic contacts for Al x Ga 1− x N/GaN high electron mobility transistors (HEMTs) …