Ferroelectric transistors for memory and neuromorphic device applications

IJ Kim, JS Lee - Advanced Materials, 2023 - Wiley Online Library
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

Ferroelectric memristor and its neuromorphic computing applications

J Du, B Sun, C Yang, Z Cao, G Zhou, H Wang… - Materials Today …, 2024 - Elsevier
Ferroelectric memristors, characterized by spontaneous polarization ferroelectric materials
as a functional layer of memristor, yields unique ferroelectric resistive switching behaviours …

Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array

S De, F Müller, N Laleni, M Lederer… - IEEE Electron …, 2022 - ieeexplore.ieee.org
This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …

Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications

Y Raffel, S De, M Lederer, RR Olivo… - ACS Applied …, 2022 - ACS Publications
This article reports an improvement in the performance of the hafnium oxide-based (HfO2)
ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial …

Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications

S De, F Müller, HH Le, M Lederer… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of
maximum amplitude 4.5 V for inference-engine applications. FeFET devices were fabricated …

Neuromorphic computing with fe-finfets in the presence of variation

S De, MA Baig, BH Qiu, HH Le… - … symposium on vlsi …, 2022 - ieeexplore.ieee.org
This paper reports a comprehensive study on the impacts of process variation on the
inference accuracy of pre-trained all-ferroelectric (Fe) FinFET deep neural networks. Multiple …

1f-1t array: Current limiting transistor cascoded fefet memory array for variation tolerant vector-matrix multiplication operation

MR Sk, S Thunder, F Müller, N Laleni… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
This letter proposes a memory cell, denoted by 1F-1 T, consisting of a ferroelectric field-
effect transistor (FeFET) cascaded with another current-limiting transistor (T). The transistor …

[HTML][HTML] SPICE compatible semi-empirical compact model for ferroelectric hysteresis

M Lederer, R Olivo, N Yadav, S De, K Seidel… - Solid-State …, 2023 - Elsevier
This paper reports a semi-empirical, SPICE compatible and computationally efficient
compact model for ferroelectric capacitors (Fe-CAP) description. This compact model is …

Interfacial layer engineering to enhance noise immunity of fefets for imc applications

Y Raffel, S Thunder, M Lederer, R Olivo… - … Conference on IC …, 2022 - ieeexplore.ieee.org
This article reports an improvement in the low-frequency noise characteristics in hafnium
oxide-based (HfO 2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) …

Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial …

V Parmar, F Müller, JH Hsuen… - Advanced Intelligent …, 2023 - Wiley Online Library
Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can
accelerate multiply and accumulate (MAC) operation of deep neural network (DNN) …