Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer - Journal of applied physics, 2010 - pubs.aip.org
Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …
interfaces and their distribution in the semiconductor band gap are compared. The …
Border traps in Ge/III–V channel devices: Analysis and reliability aspects
The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …
Border traps in Al2O3/In0. 53Ga0. 47As (100) gate stacks and their passivation by hydrogen anneals
Charge-trapping defects in Pt/Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor
capacitors and their passivation by hydrogen are investigated in samples with abrupt …
capacitors and their passivation by hydrogen are investigated in samples with abrupt …
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
We report experimental and theoretical studies of defects producing fixed charge within Al 2
O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As (001) substrates …
O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As (001) substrates …
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0 …
In this work, we present the results of an investigation into the effectiveness of varying
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis
Border traps and interface traps in HfO 2/few-layer MoS 2 top-gate stacks are investigated by
C–V characterization. Frequency dependent C–V data shows dispersion in both the …
C–V characterization. Frequency dependent C–V data shows dispersion in both the …
Passivation of III–V surfaces with crystalline oxidation
P Laukkanen, MPJ Punkkinen, M Kuzmin… - Applied Physics …, 2021 - pubs.aip.org
Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …
minimize the impact of point defects on device performance has been a dominant theme in …
Optimization of the Interface and a High-Mobility GaSb pMOSFET
While there have been many demonstrations on n-channel metal-oxide-semiconductor field-
effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and …
effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and …
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0. 53Ga0. 47As metal-oxide …
The inversion behaviors of atomic-layer-deposition Al 2 O 3/n-In 0.53 Ga 0.47 As metal-
oxide-semiconductor capacitors are studied by various surface treatments and …
oxide-semiconductor capacitors are studied by various surface treatments and …