Controlled spalling is a fast process that can mechanically exfoliate III-V semiconductor
layers from their host wafer substrates and has the potential to produce high power-density …

III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with
significantly higher absorption compared to silicon. The high absorption allows for the …

Abstract Development of high‐efficiency solar cell modules and new application fields are
significant for the further development of photovoltaics (PVs) and the creation of new clean …

We report gallium arsenide (GaAs) growth rates exceeding 300 µm h− 1 using dynamic
hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium …

To date, solar-powered electric vehicles (EVs) have often been considered as niche projects
or with small vehicle rooftop panels that can slightly extend the electric driving range. This …

Solar cells from III-V materials offer outstanding light conversion efficiency and power
densities and have a proven reliability record. Nevertheless, the utilization of III-V devices …

Thinning down the absorber layer of GaAs solar cells can reduce their cost and improve
their radiation hardness, which is important for space applications. However, the …

Silicon is the dominant semiconductor in many semiconductor device applications for a
variety of reasons, including both performance and cost. III-V materials exhibit improved …

Hydride vapor phase epitaxy (HVPE) is a III–V device fabrication technology that has
received attention owing to its low production costs. The properties of passivation layers …

Abstract A 24%‐efficient single‐junction GaAs solar cell grown directly on a faceted, spalled
(100) GaAs substrate after in situ planarization growth by hydride vapor phase epitaxy …