Model-based control methods do not produce satisfactory control results with the batch
process control of Czochralski (CZ) silicon monocrystalline with complex nonlinearity, large …

Czochralski (Cz) silicon single crystal growth process is a large delay, nonlinear dynamic
time-varying system with complex physicochemical reactions, multi-field and multi-phase …

On the occasion of the centennial of the invention of the Czochralski crystal growth process
by the Polish scientist Jan Czochralski, a review of selected strategies for the automatic …

The Czochralski (CZ) process is the core technology for producing semiconductor silicon
monocrystalline (SMC), and it is a complex batch process. However, the crystal growth rate …

A new control structure with constant pulling speed for growing high-quality crystal in the
Czochralski (CZ) method is presented in this brief. In this control structure, the pulling speed …

The Czochralski (CZ) process is the dominant method for manufacturing large cylindrical
single-crystal ingots for the electronics industry. Although many models and control methods …

The growth process of Czochralski (Cz) silicon single crystal is a dynamic time-varying
system with nonlinearity, strong coupling, large hysteresis, and uncertain model. Traditional …

A non-stationary axisymmetric model of Czochralski silicon single crystal growth is
presented. The model describes transient behavior of crystal–melt, melt–gas and crystal …

Commercially, the Czochralski process plays a key role in production of monocrystalline
silicon for semiconductor and solar cell applications. However, it is a highly complex batch …

We have developed a reinforcement learning (RL) model to control the melt flow in the radio
frequency (RF) top-seeded solution growth (TSSG) process for growing more uniform SiC …