The material realization with significant coupling between magnetic and electric order
named “magnetoelectric effect” would be a major turning point for the modern electronic …

Ferroelectric tunnel junction (FTJ) is a promising emerging memristor for the artificial
synapse in neuro-inspired computing, which has parallel data processing and low power …

Present study reports the structural and dielectric properties of Ce 1-x Mn x O 2 (0≤ x≤
0.15) compounds synthesized by solid state reaction method. X-ray diffraction and Raman …

MXene's two-dimensional (2D) morphology, metallic electrical conductivity, and optical
transparency characteristics have been widely utilized to uplift the performance of diverse …

Wide band gap III-nitride materials have gained considerable attention as promising
semiconductor materials for light-emitting photonic diodes and high-frequency/power …

Considering the power consumption and safety risks in the presence of combustible gases,
sensor operation at room temperature (RT∼ 28° C) has drawn much interest in recent days …

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN
Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes …

Abstract Vertical Schottky barrier diodes (SBDs) were fabricated from the metal–organic
chemical vapor deposition (MOCVD)-grown GaN epitaxial layer on free-standing GaN …

We report a family of ferroelectric materials which exhibit optical control of dielectric
constant, polarization, and conductivity at ambient conditions. The evolution of photo …

Abstract Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-
standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material …