A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …
Spray‐pyrolyzed high‐k zirconium‐aluminum‐oxide dielectric for high performance metal‐oxide thin‐film transistors for low power displays
A high‐k, zirconium‐aluminum‐oxide (ZAO) gate insulator (GI) using low‐cost spray
pyrolysis technique for large area and low power electronics is demonstrated. The high …
pyrolysis technique for large area and low power electronics is demonstrated. The high …
Realization of Enhanced Long‐Term Visual Memory for Indium–Gallium–Zinc Oxide‐Based Optical Synaptic Transistor
Amorphous indium–gallium–zinc oxide (IGZO)‐based optical synaptic transistor using
visible light as the signal that shows a clear difference between long‐term memory (LTM) …
visible light as the signal that shows a clear difference between long‐term memory (LTM) …
Simultaneously defined semiconducting channel layer using electrohydrodynamic jet printing of a passivation layer for oxide thin-film transistors
A simple fabrication method for homojunction-structured Al-doped indium–tin oxide (ITO)
thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed Al2O3 …
thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed Al2O3 …
A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT
Amorphous oxide thin-film transistors (TFTs), including a-InGaZnO (IGZO) in particular, are
promising devices for display and other applications. For commercial fabrication, IGZO is …
promising devices for display and other applications. For commercial fabrication, IGZO is …
Surface passivation engineering approach to fluoroacrylate-incorporated polytetrafluoroethylene for highly reliable a-IGZO TFTs
F Shan, HL Zhao, XL Wang, JY Lee… - Journal of Materials …, 2022 - pubs.rsc.org
Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted
considerable attention for cutting-edge and next-generation electronics applications …
considerable attention for cutting-edge and next-generation electronics applications …
Enhanced interfacial integrity of amorphous oxide thin-film transistors by elemental diffusion of ternary oxide semiconductors
Low-temperature solution-processed oxide semiconductor and dielectric films typically
possess a substantial number of defects and impurities due to incomplete metal–oxygen …
possess a substantial number of defects and impurities due to incomplete metal–oxygen …
Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide …
In this research, we report the rapid and reliable formation of high-performance nanoscale
bilayer oxide dielectrics on silicon substrates via low-temperature deep ultraviolet (DUV) …
bilayer oxide dielectrics on silicon substrates via low-temperature deep ultraviolet (DUV) …
High-Throughput Open-Air Plasma Activation of Metal-Oxide Thin Films with Low Thermal Budget
Sputter-processed oxide films are typically annealed at high temperature (activation
process) to achieve stable electrical characteristics through the formation of strong metal …
process) to achieve stable electrical characteristics through the formation of strong metal …
Aqueous solution processing of combustible precursor compounds into amorphous indium gallium zinc oxide (IGZO) semiconductors for thin film transistor …
S Sanctis, RC Hoffmann, N Koslowski… - Chemistry–An Asian …, 2018 - Wiley Online Library
Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:
Ga: Zn, 7: 1: 1.5) thin films was carried out using urea nitrate precursor compounds of indium …
Ga: Zn, 7: 1: 1.5) thin films was carried out using urea nitrate precursor compounds of indium …